14 January 1993 Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation
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Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139355
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Hot carrier device lifetime diminishes dramatically as operating temperature decreases. The hot carrier lifetime at liquid nitrogen temperature is usually several orders of magnitude lower than at room temperature. In this work, we show the dependence of hot carrier device lifetime of LDD nMOSFETs on temperature and stress condition in the temperature range from 78 K to room temperature. There is a cross-over point at which the worst-case hot carrier stress condition switches from Vg approximately equals 1/2 Vd (Vg Ibmax) to Vg equals Vd with decreasing temperature. Consequently, the dominant damage mechanism switches from interface state generation to trapped charge generation.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miryeong Song, Miryeong Song, Kenneth P. MacWilliams, Kenneth P. MacWilliams, Jason C.S. Woo, Jason C.S. Woo, } "Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); doi: 10.1117/12.139355; https://doi.org/10.1117/12.139355
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