16 April 1993 Chamber contamination in ashing processes of ion-implanted photoresist
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142939
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Ion-implanted photoresist is known to be difficult to remove using plasma ashing because of its carbonized top layer. After ion implantation, heating of the wafer substrate in ashers can cause resist popping if the temperature exceeds the implantation bake temperature. This paper presents chamber contamination measurements following ashing of implanted photoresist. Among the four implant species tested, boron resulted in the most severe resist popping. Higher implant dose, energy, and ashing temperature also caused more popping of the resist. In general, more severe resist popping during ashing caused more residues to be left on subsequent wafers put through the chamber. The type of asher had a large effect on redeposition of residues on subsequent wafers.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Kassel, Laurent Kassel, Jeff R. Perry, Jeff R. Perry, } "Chamber contamination in ashing processes of ion-implanted photoresist", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142939; https://doi.org/10.1117/12.142939
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