16 April 1993 Controlling polymer formation during polysilicon etching in a magnetically enhanced reactive ion etcher
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142931
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Studies were conducted in a magnetically enhanced reactive ion etcher to understand the material and process related issues affecting polymer formation during a polysilicon etch. Samples consist of POCl3 doped and undoped polysilicon which are patterned with two different types of photoresist. Processing is done using a Cl2/HBr chemistry with some of the experiments having oxygen added during the over etch step of the process. Scanning electron microscope results indicate two very distinct structures exist on the various samples. One that exhibits a more uniform polymer and the other that leaves an `ear' shaped polymer formation. These various structures also are analyzed using x-ray photoelectron spectroscopy. This analysis indicates the polymers to be a combination of silicon, oxygen, and carbon. Based on this study it is apparent that the type of material, photoresist, and process variables significantly influence the polymer formation during the etching of undoped and doped polysilicon with an HBr/Cl2 chemistry.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heidi L. Denton, Robert M. Wallace, "Controlling polymer formation during polysilicon etching in a magnetically enhanced reactive ion etcher", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142931; https://doi.org/10.1117/12.142931
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