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16 April 1993 Effect of bulk doping on the etching rate of silicon by halogen atoms
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.143240
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
The concept of field-assisted etching is developed. Numerical solution is obtained for the equilibrium flux of negative halogen ions through a thin (h <EQ 10 angstrom) buffer layer of reaction onto the surface of silicon of various bulk dopings. Results of the numerical simulation are compared with the experimental data.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey I. Krechetov "Effect of bulk doping on the etching rate of silicon by halogen atoms", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.143240
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