New dry-development process of trilayer resist systems for advanced lithography

Olivier P. Joubert; C. Martinet; Jacques H. Pelletier; Michel J. Pons; Jean-Marc Francou; Jean-Pierre Panabiere; Andre P. Weill; Serge V. Tedesco; Francoise Vinet; Thierry Mourier

doi:10.1117/12.142920

16 April 1993 New dry-development process of trilayer resist systems for advanced lithography

Olivier P. Joubert, C. Martinet, Jacques H. Pelletier, Michel J. Pons, Jean-Marc Francou, Jean-Pierre Panabiere, Andre P. Weill, Serge V. Tedesco, Francoise Vinet, Thierry Mourier

Author Affiliations +

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142920
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been made using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss is always present in the O₂ pressure and ion bombardment energy ranges investigated. The mechanisms most likely to be responsible for these defects during the pattern transfer process are presented and discussed. Perfect anisotropy can only be obtained at substrate temperatures below -60 degree(s)C. A novel plasma etching process based on sidewall passivation by sulfur is proposed using SO₂/O₂ mixtures. Perfect anisotropy without critical dimension loss is obtained at room temperature by using an 80% SO₂/20% O₂ mixture and a moderate ion bombardment energy. The ultimate resolution using this new plasma process in conjunction with deep UV exposure and a phase-shift mask is presented.

Citation Download Citation

Olivier P. Joubert, C. Martinet, Jacques H. Pelletier, Michel J. Pons, Jean-Marc Francou, Jean-Pierre Panabiere, Andre P. Weill, Serge V. Tedesco, Francoise Vinet, and Thierry Mourier "New dry-development process of trilayer resist systems for advanced lithography", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142920

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