16 April 1993 New dry-development process of trilayer resist systems for advanced lithography
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993); doi: 10.1117/12.142920
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been made using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss is always present in the O2 pressure and ion bombardment energy ranges investigated. The mechanisms most likely to be responsible for these defects during the pattern transfer process are presented and discussed. Perfect anisotropy can only be obtained at substrate temperatures below -60 degree(s)C. A novel plasma etching process based on sidewall passivation by sulfur is proposed using SO2/O2 mixtures. Perfect anisotropy without critical dimension loss is obtained at room temperature by using an 80% SO2/20% O2 mixture and a moderate ion bombardment energy. The ultimate resolution using this new plasma process in conjunction with deep UV exposure and a phase-shift mask is presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Olivier P. Joubert, C. Martinet, Jacques H. Pelletier, Michel J. Pons, Jean-Marc Francou, Jean-Pierre Panabiere, Andre P. Weill, Serge V. Tedesco, Francoise Vinet, Thierry Mourier, "New dry-development process of trilayer resist systems for advanced lithography", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142920; https://doi.org/10.1117/12.142920
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KEYWORDS
Etching

Ions

Plasma

Oxygen

Photomasks

Chemical species

Lithography

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