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16 April 1993 New method for etching rate and resist profile control in O2RIE
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142908
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
This paper describes a new method for etching rate and resist profile control in O2RIE. The method simply determines the equivalent process conditions for different device layers with various areas of the material to be etched (etchable area) by introducing the ratio of the etchable area to the flow rate defined as S/F parameter. The concept of this method is that the gas composition controlled by S/F parameter determines both the etching rate and the resist profile under the constant energy flux densities of ions and energetic neutrals (ion impact density). S/F parameter is introduced through the extended expressions of Mogab's loading effect theory by applying two important characteristics in O2RIE: (1) The dominant etchant is oxygen molecules. (2) The etching rate is proportional to the ion impact density. The etching rate and the gas composition are expressed as functions of S/F parameter and the ion impact density in the extended expressions. The etching rate and the resist profile have been controlled by applying this method to wafer samples with various etchable areas. Furthermore, a linear relationship between the etching rate and the resist profile is clarified.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuki Kimura, Ryouichi Aoyama, Seki Suzuki, and Hiroshi Ohtsuka "New method for etching rate and resist profile control in O2RIE", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142908
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