16 April 1993 On-line control of single-wafer plasma etch process
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142911
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
A new on-line control method of within-a-wafer uniformity for single wafer processes is presented. The method aims to reduce the risk of applying on-line control of the uniformity by categorizing the process variabilities into tunable variability and non-tunable variability. The non-tunable variability is optimized off-line and the tunable variability is controlled on-line. According to the effects of process parameters on the process variabilities, the process parameters are grouped as robustness factors, tuning factor, and adjustment factor. The use of properly selected tuning factor and adjustment factor reduces the risk of undesirable effects of on-line control. The method is applied to the oxide etch process using a LAM AutoEtch 590 single wafer plasma etcher. On-line control improved the within-a-wafer uniformity ((sigma) /(mu) ) by a factor of two over the uncontrolled within-a-wafer uniformity.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungdo Ha, Sungdo Ha, Emanuel Sachs, Emanuel Sachs, } "On-line control of single-wafer plasma etch process", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142911; https://doi.org/10.1117/12.142911

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