Plasma etching of silylated photoresist: a study of mechanisms

Olivier P. Joubert; Michel J. Pons; Francoise Debaene; Andre P. Weill

doi:10.1117/12.142909

16 April 1993 Plasma etching of silylated photoresist: a study of mechanisms

Olivier P. Joubert, Michel J. Pons, Francoise Debaene, Andre P. Weill

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142909
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

We have studied the relevant parameters involved in the dry development of silylated polymers. In particular the influence of substrate temperature, ion energy, and atomic oxygen concentration is investigated. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer. Improvements of the process are suggested.

Citation Download Citation

Olivier P. Joubert, Michel J. Pons, Francoise Debaene, and Andre P. Weill "Plasma etching of silylated photoresist: a study of mechanisms", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142909

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available