16 April 1993 Plasma etching of silylated photoresist: a study of mechanisms
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142909
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
We have studied the relevant parameters involved in the dry development of silylated polymers. In particular the influence of substrate temperature, ion energy, and atomic oxygen concentration is investigated. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer. Improvements of the process are suggested.
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Olivier P. Joubert, Michel J. Pons, Francoise Debaene, Andre P. Weill, "Plasma etching of silylated photoresist: a study of mechanisms", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142909; https://doi.org/10.1117/12.142909
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