16 April 1993 Process control improvements realized in a vertical reactor cluster tool
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Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142928
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Advance cell structures present in high-density memories and logic devices require high quality, ultra thin dielectric and conductor films. By controlling the interface properties of such films, remarkable process control enhancements of manufacturing proven, vertical LPCVD and oxidation processes are realized. To this end, an HF/H2O vapor etch reactor is integrated in a vacuum cluster tool comprising vertical reactors for the various LPCVD and oxidation processes. Data of process control improvement are provided for polysilicon emitters, polysilicon contacts, polysilicon gates, and NO capacitors. Finally, the cost of ownership of cluster tool use is compared with that of stand-along equipment.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris J. Werkhoven, Chris J. Werkhoven, E. H. Granneman, E. H. Granneman, E. Lindow, E. Lindow, "Process control improvements realized in a vertical reactor cluster tool", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142928; https://doi.org/10.1117/12.142928
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