Process control improvements realized in a vertical reactor cluster tool

Chris J. Werkhoven; E. H. Granneman; E. Lindow

doi:10.1117/12.142928

16 April 1993 Process control improvements realized in a vertical reactor cluster tool

Chris J. Werkhoven, E. H. Granneman, E. Lindow

Author Affiliations +

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142928
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Advance cell structures present in high-density memories and logic devices require high quality, ultra thin dielectric and conductor films. By controlling the interface properties of such films, remarkable process control enhancements of manufacturing proven, vertical LPCVD and oxidation processes are realized. To this end, an HF/H₂O vapor etch reactor is integrated in a vacuum cluster tool comprising vertical reactors for the various LPCVD and oxidation processes. Data of process control improvement are provided for polysilicon emitters, polysilicon contacts, polysilicon gates, and NO capacitors. Finally, the cost of ownership of cluster tool use is compared with that of stand-along equipment.

Citation Download Citation

Chris J. Werkhoven, Chris J. Werkhoven, E. H. Granneman, E. H. Granneman, E. Lindow, E. Lindow, "Process control improvements realized in a vertical reactor cluster tool", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142928; https://doi.org/10.1117/12.142928

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