16 March 1993 Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping
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Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142090
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Shallow junctions under silicide contact layers have been fabricated using a gas-phase dopant source and pulsed laser heating. A spatially homogenized 308 nm XeCl pulsed laser is used to drive adsorbed gas phase dopant species, e.g. BF3, AsF5, PF5, into the silicide overlayers and to outdiffuse dopants into the silicon substrate. High interface concentrations (Cint > 1020 atoms/cm3) and junctions < 1500 angstroms in depth have been obtained using this technique. Film/substrate interface roughness is unaffected by laser irradiation. Results from SIMS, RBS, and TEM analyses are presented in this paper.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emi Ishida, Emi Ishida, Karl-Josef Kramer, Karl-Josef Kramer, Thomas W. Sigmon, Thomas W. Sigmon, Kurt H. Weiner, Kurt H. Weiner, } "Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142090; https://doi.org/10.1117/12.142090
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