Laser-assisted epitaxy of III-V compounds

U. Sudarsan; Rajendra Solanki

doi:10.1117/12.142094

16 March 1993 Laser-assisted epitaxy of III-V compounds

U. Sudarsan, Rajendra Solanki

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142094
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Laser-assisted epitaxial growth of III-V semiconductors has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon laser operating at 514.5 nm was used to 'direct-write' epitaxial microstructures using the pyrolytic process, whereas an excimer laser was utilized to examine the photolytic process. Dependence of the film properties on the laser parameters is investigated. This discussion is limited to homo- and heteroepitaxy of GaP.

Citation Download Citation

U. Sudarsan and Rajendra Solanki "Laser-assisted epitaxy of III-V compounds", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142094

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