Laser-enhanced CVD for low-temperature Si epitaxy

Sanjay K. Banerjee

doi:10.1117/12.142093

16 March 1993 Laser-enhanced CVD for low-temperature Si epitaxy

Sanjay K. Banerjee

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142093
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Low thermal-budget semiconductor processing will have a major impact on future Ultra Large Scale Integration (ULSI) and Si-based heterostructure devices because it reduces thermal- stress-generated-defects and maintains compact doping profiles and heterolayer integrity. This paper discusses low temperature Si homoepitaxy at temperatures as low as 250 degree(s)C by photo-enhanced chemical vapor deposition (PCVD) using the photolytic decomposition of Si₂H₆ by the 193 nm emission of an ArF excimer laser in an ultra high vacuum system. Very low defect density films, in terms of stacking faults and dislocation loops (less than 10⁵ cm^-2), and excellent crystallinity have been grown. The growth rates increase linearly with laser power.

Citation Download Citation

Sanjay K. Banerjee "Laser-enhanced CVD for low-temperature Si epitaxy", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142093

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