16 March 1993 RTP temperature control requirement for submicron device fabrication
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Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142078
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
For deep submicron device manufacturing, Rapid Thermal Processing (RTP) tools will play a major role. Current RTP tools have not been fully integrated into manufacturing. The most important problem is the product wafer temperature control. Data obtained on implant activation, titanium silicidation and oxidation processes will be reviewed to present the capability of current tools. Temperature control requirements for deep submicron device manufacturing will be discussed. Process performance of current RTP tools fall far short of the requirements.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Asit K. Ray "RTP temperature control requirement for submicron device fabrication", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142078; https://doi.org/10.1117/12.142078

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