21 May 1993 Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy
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Abstract
Electromigration performance is investigated for Al-Si(1%)-Cu(0.5%) alloy on a CVD-W or Ti:W barrier layer, and the effectiveness of a Ti:W capping layer to suppress electromigration is explored. Compared to a Ti:W barrier layer, the surface roughness of the CVD-W barrier layer degrades electromigration performance, however, a capping layer of Ti:W sequentially sputtered on top of the aluminum-alloy will substantively improve the electromigration performance when either barrier layer system is used. The improvement is observed to increase with the thickness of the Ti:W capping layer. Investigations of the failure kinetics and material properties indicate the EM performance improvement is primarily due to changes in the Al-alloy micro-structure.
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Jeff S. May, Jeff S. May, Dave J. Yost, Dave J. Yost, Carole D. Graas, Carole D. Graas, Joe W. McPherson, Joe W. McPherson, } "Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145473; https://doi.org/10.1117/12.145473
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