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21 May 1993 Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections
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Abstract
The electromigration behavior of Ti-AlCu-Ti metallurgy is presented in this work. For single- level structures in the absence of tungsten (W) stud interconnections, a greater-than-100X lifetime improvement over AlCu is measured. The metal linewidth strongly affects the median time to failure, T50, and standard deviation, sigma ((sigma) ), of the lognormal distribution. For two-level W stud chains, a 50X degradation in lifetime as compared to single-level structures is measured. The lifetime of these W stud chains depends on the Ti- AlCu-Ti current density rather than the stud current density. The 'reservoir effect', in which the electromigration lifetime of Ti-AlCu-Ti stripes depends strongly on W studs near the electron source end of the stripes, is a direct result of W acting as a diffusion barrier. The lifetime of W stud chains with Ti-AlCu-Ti metallurgy is longer for 2.0% copper than for 0.5% copper.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hazara Singit Rathore, R. G. Filippi, R. A. Wachnik, Jose J. Estabil, and Thomas Kwok "Electromigration and current-carrying implications for aluminum-based metallurgy with tungsten stud via interconnections", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145481
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