21 May 1993 Impact of interlevel dielectric materials on stress-induced voiding of metal 1
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Abstract
Stress-induced voiding of 1.2 micrometers wide metal 1 lines is quantified for two different interlevel dielectric schemes. The first involves a multi-step sequence of PETEOS depositions and etchbacks. The second is a PETEOS/siloxane spin-on-glass/PETEOS sandwich. Metal 1 consists of 4500 angstroms of Al (0.75% Si, 0.5% Cu) over 600 angstroms of Ti/TiN. Separate experiments show the stresses in the PETEOS and SOG films are compressive and tensile, respectively. After 2000 hr. at 175 degree(s)C, metal 1 lines covered by the spin-on- glass sandwich dielectric exhibit considerably fewer voids that penetrate <EQ 30% of linewidth and a comparably low density of voids that penetrate 30 - 50% of linewidth. No voids > 50% of linewidth are observed with either dielectric scheme. This result indicates that the spin-on glass is able to reduce the net voiding stresses in the aluminum.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Z. Chew, C. A. Fieber, P. Kelley, Thiet T. Lai, Vivian Ryan, "Impact of interlevel dielectric materials on stress-induced voiding of metal 1", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145470; https://doi.org/10.1117/12.145470
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