21 May 1993 Issues and opportunities for submicron metallization systems (Abstract Only)
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Abstract
At sub-half micron design rules and smaller, the (multilevel) metallization required to meet performance and reliability requirements are driving the investigation and development of new materials and processing techniques. Step coverage of films in increasingly smaller and deeper structures will mandate fresh approaches in both physical vapor deposition (PVD) and chemical vapor deposition (CVD) film techniques. Low resistivity metals, such as copper, and low permittivity dielectrics, such as polyimide, are being investigated worldwide. Diffusion barrier development has assumed special importance with metallorganic CVD and collimated sputtering PVD techniques showing promise. Key issues are film integrity and density over abrupt topography and effectiveness of the very thin (< 50 nm) layers required for quarter micron via liners. Needs for increased reliability are as much a driver as increased performance. Though copper has been expected to be largely resistant to stress migration effects, recent data have raised doubts. As with all other processes required for deep submicron manufacture, advanced multilevel metallization techniques must conform to increasingly stringent yield criteria and be consistent with requirements of contamination free manufacturing.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert S. Blewer, Robert S. Blewer, Thomas R. Omstead, Thomas R. Omstead, James G. Fleming, James G. Fleming, Paul M. Smith, Paul M. Smith, "Issues and opportunities for submicron metallization systems (Abstract Only)", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145450; https://doi.org/10.1117/12.145450
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