The techniques to study signal delay distortion and crosstalk in high density VLSI/ULSI micron and submicron interconnects are reviewed. These include numerical techniques based on the method of characteristics and the transform based techniques as well as frequency and time domain measurement techniques. The limitations of the classical modeling and measurement techniques in the submicron metallization regime are examined.
Vijai K. Tripathi, Vijai K. Tripathi,
"Micron and submicron interconnect modeling (Abstract Only)", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145456; https://doi.org/10.1117/12.145456