Modeling electromigration lifetime under pulsed and AC current stress

Chenming Hu; Nathan W. Cheung; J. Tao; Boon-Khim Liew

doi:10.1117/12.145472

21 May 1993 Modeling electromigration lifetime under pulsed and AC current stress

Chenming Hu, Nathan W. Cheung, J. Tao, Boon-Khim Liew

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145472
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Electromigration lifetime under DC current stress is now routinely measured to support new metallization process development as well as to monitor the control of an existing process. The measured DC lifetime value, or design rule, is the only link between process technology and circuit design for metal reliability. This paper reviews a defect relaxation model for pulsed DC (non-alternating) current stress lifetime and a damage-healing model for AC (bidirectional) current stress lifetime. The purpose is to model the metal reliability of IC's. Both models significantly raise the predicted lifetime beyond the predictions of some previous models.

Citation Download Citation

Chenming Hu, Nathan W. Cheung, J. Tao, and Boon-Khim Liew "Modeling electromigration lifetime under pulsed and AC current stress", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145472

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