21 May 1993 Role of surface diffusion in electromigration phenomena
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Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993); doi: 10.1117/12.145484
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Electromigration (EM) phenomena are generally and quite accurately attributed to electron flow enhanced grain boundary diffusion processes. However, there is clear evidence in the literature and in the work that will be presented, that surface or interface diffusion phenomena also contribute to electromigration damage (EMD) in Al, Cu, and alloy films. Most of this evidence comes from transmission and scanning electron microscope experiments carried out on samples that have experienced the latter stages of EMD stressing. Evidence for surface or interface diffusion occurs in hillock formation and annealing, film thinning, voiding and island formation, and regrowth-healing events on current reversal. The implications of these results in attempting to reduce EMD in microelectronic metallizations are presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard W. Vook, C. Y. Chang, C. W. Park, "Role of surface diffusion in electromigration phenomena", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145484; https://doi.org/10.1117/12.145484
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KEYWORDS
Diffusion

Aluminum

Oxides

Metals

Copper

Interfaces

Chemical species

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