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21 May 1993 Statistical distributions of stress and electromigration-induced failure
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The reliability of the narrow, passivated metal lines connecting devices in microelectronic circuits may well define an ultimate limit for achievable device density and circuit performance. Rather than average lifetimes, we are usually concerned with the first failures among millions of lines. The extrapolation of a limited number of accelerated test results to service conditions and very early failure clearly requires a fundamental understanding of the possible failure mechanisms. Based on recent theoretical progress we discuss current and potential capabilities in the modelling of failure distributions. In general, electromigration induced failure distributions can be calculated, if the detailed distributions of microstructure, precipitates and thermal stress induced voids are known.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Borgesen, M. A. Korhonen, and Che-Yu Li "Statistical distributions of stress and electromigration-induced failure", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993);

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