Avalanche photodetector array based on metal-resistive layer-semiconductor structures

V. B. Zalessky; Tamara R. Leonova; S. A. Malyshev; V. R. Pan; S. Yu. Rakhley; S. A. Shunevitch

doi:10.1117/12.147940

28 June 1993 Avalanche photodetector array based on metal-resistive layer-semiconductor structures

V. B. Zalessky, Tamara R. Leonova, S. A. Malyshev, V. R. Pan, S. Yu. Rakhley, S. A. Shunevitch

Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147940
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus

Abstract

The results of investigations of avalanche photodetectors based on metal-resistive layer-silicon (MRLS) structures are presented. Consideration is given to a 10 X 10 MRLS photodetector array.

Citation Download Citation

V. B. Zalessky, Tamara R. Leonova, S. A. Malyshev, V. R. Pan, S. Yu. Rakhley, and S. A. Shunevitch "Avalanche photodetector array based on metal-resistive layer-semiconductor structures", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147940

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