28 June 1993 Free-carrier electro-optical effect in semiconductors
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Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147900
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus
The electric field effect on the free carrier absorption in semiconductors is considered on the basis of the quantum transport equation. In the quantum limit analyzed this effect is caused by the influence of the electric field on the electron-phonon interaction rather than by the hot carrier effect. Due to the dynamical origin this effect is characterized by the small response time of subpicosecond range.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. L. Malevich, V. L. Malevich, } "Free-carrier electro-optical effect in semiconductors", Proc. SPIE 1807, Photonic Switching, (28 June 1993); doi: 10.1117/12.147900; https://doi.org/10.1117/12.147900

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