28 June 1993 Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels
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Proceedings Volume 1807, Photonic Switching; (1993); doi: 10.1117/12.147895
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus
Abstract
The e-h plasma stimulated luminescence line A1 red-shifted (25 meV) due to band-gap renormalization is detected. The A1 emission lasts 100 ps. This peculiarity evidenced that a switching time of 100 ps can be achieved.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. Bobrysheva, I. I. Dobinda, S. A. Moskalenko, V. I. Pavlenko, P. I. Perov, I. M. Razdobreev, S. S. Russu, Yu. G. Shekun, "Optical switching due to band-gap renormalization in MQW GaAs/AlxGa1-xAs at high excitation levels", Proc. SPIE 1807, Photonic Switching, (28 June 1993); doi: 10.1117/12.147895; https://doi.org/10.1117/12.147895
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KEYWORDS
Luminescence

Excitons

Picosecond phenomena

Absorption

Quantum wells

Optical switching

Switching

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