Paper
28 June 1993 Picosecond grating dynamics in GaAs and CdTe at 1.064 μm
N. Brugel, P. Carnus, Michel Pugnet, Jacques H. Collet, Laurent Nardo, J. L. Iehl
Author Affiliations +
Proceedings Volume 1807, Photonic Switching; (1993) https://doi.org/10.1117/12.147927
Event: Topical Meeting on Photonic Switching, 1992, Minsk, Belarus
Abstract
Laser-induced transient gratings generated by picosecond pulses at 1.064 micrometers in GaAs and CdTe samples were used to diffract a picosecond probe pulse in the degenerate-four-wave- mixing geometry. Pulse and probe experiments performed using the same experimental set-up allowed us to measure the free-carrier lifetime. The ambipolar diffusion coefficient D was then determined by using only one laser-material geometrical configuration. In semi-insulating GaAs:Cr and CdTe:W, gratings persisted for more than one nanosecond and could be partially erased using a homogeneous picosecond pulse, the energy of which was one quarter of the writing energy. We present a model which explains these results.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Brugel, P. Carnus, Michel Pugnet, Jacques H. Collet, Laurent Nardo, and J. L. Iehl "Picosecond grating dynamics in GaAs and CdTe at 1.064 μm", Proc. SPIE 1807, Photonic Switching, (28 June 1993); https://doi.org/10.1117/12.147927
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Picosecond phenomena

Gallium arsenide

Absorption

Electrons

Modulation

Diffraction

Diffraction gratings

Back to Top