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26 March 1993 Initial manufacturing performance of an actively controlled PBS resist development process
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An improvement in the method used to fabricate 5 X 5 in2 -1 and 5x biased and unbiased optical masks is achieved by actively controlling the resist development step of the mask fabrication process. This method has been initially applied to a photomask process which utilizes poly(1-butene-co-sulfur dioxide)(PBS) resist as the pattern delineation material. Real-time targeting of resist feature dimensions is performed using a Laserlith Resist Thickness and Endpoint Controller which has been adapted to an Applied Process TechnologyR/Convac Model 915 resist processor. The controller monitors in real-time the one-step resist development process for a time period based on the measured development rate of the resist, the geometry and size of the targeted feature. After the resist is developed, the controller instructs the resist processor to continue onto the remaining steps in the processing cycle. The targeted resist features of initial product produced using this system have an average variation from targeted size of 0.04 micrometers and an average resist linewidth uniformity (3(sigma) ) of 0.04 micrometers . These results indicate that active control of this critical development step enables the resist feature dimensions to be within +/- 0.05 micrometers of their targeted size after completion of the post-development bake step.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony E. Novembre, Regine G. Tarascon, Larry F. Thompson, Wallace T. Tang, C. Otis Tange, R. A. Bostic, and D. H. Ahn "Initial manufacturing performance of an actively controlled PBS resist development process", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993);

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