26 March 1993 Performance and perspective of the newly developed high-accuracy mask-making EB lithography system JBX-7000MV designed for 64M DRAM production
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Abstract
The semiconductor industry has directed its course toward volume production of 64M DRAMs. Feature sizes of typical 64M DRAM are 0.3 to 0.4 micrometers , and the linewidth and positioning accuracies required for 5X reticle production are both 0.05 micrometers . To respond to these requirements, JEOL has developed an electron beam lithography system for reticle making, JBX-7000MV, which incorporates improved variable shaped beam optics to assure high speed and highly accurate pattern writing. The high accuracy writing was made possible by: (1) reducing the pattern data increment and correction increments by 1/2; (2) applying a field shift writing method; and (3) a new substrate holder insensitive to the weight of a mask. This paper introduces the JBX-7000MV and its capabilities, and discusses the issues required for second generation 64M DRAM reticles. Anticipated improvements expected to be integrated in the JBX-7000MV to meet these requirements are discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Komagata, Tadashi Komagata, Hitoshi Takemura, Hitoshi Takemura, Nobou Goto, Nobou Goto, Ron Espeseth, Ron Espeseth, Michael Hassel Shearer, Michael Hassel Shearer, } "Performance and perspective of the newly developed high-accuracy mask-making EB lithography system JBX-7000MV designed for 64M DRAM production", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); doi: 10.1117/12.142137; https://doi.org/10.1117/12.142137
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