Primary processes in e-beam and laser lithographies for phase-shift mask manufacturing II

Masa-aki Kurihara; Masumi Arai; Hiroshi Fujita; Hisashi Moro-oka; Yoichi Takahashi; Hisatake Sano

doi:10.1117/12.142150

26 March 1993 Primary processes in e-beam and laser lithographies for phase-shift mask manufacturing II

Masa-aki Kurihara, Masumi Arai, Hiroshi Fujita, Hisashi Moro-oka, Yoichi Takahashi, Hisatake Sano

Proceedings Volume 1809, 12th Annual BACUS Symposium on Photomask Technology and Management; (1993) https://doi.org/10.1117/12.142150
Event: Photomask Technology, 1992, Sunnyville, CA, United States

Abstract

Two lithographic processes for phase-shift mask (PSM) manufacturing have been investigated. In particular, processes in E-beam (electron beam) lithography by use of a charge-dissipating layer of a conductive polymer are studied. Two commercial conductive polymers, TQV and ESPACER100, are found to work well for charge-dissipation. Three new resists along with CMS and EBR9 are evaluated regarding their properties necessary for patterning a shifter layer. Among them two new resists are demonstrated to be excellent. The effect of the number of data-blocks on the alignment accuracy is examined in delineation with a Hitachi HL-600, where each data-block has four fine-alignment marks. The examination suggests that the use of one or two data-blocks is practical. As to combination of writers for the Cr level and the shifter level, HL-600 - HL-600 gave better alignment accuracy than the other combinations, WW6000 - HL-600 and MEBES III - HL-600, did. The comparison between the E-beam and the laser writers is summarized.

Citation Download Citation

Masa-aki Kurihara, Masumi Arai, Hiroshi Fujita, Hisashi Moro-oka, Yoichi Takahashi, and Hisatake Sano "Primary processes in e-beam and laser lithographies for phase-shift mask manufacturing II", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); https://doi.org/10.1117/12.142150

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