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26 March 1993 Vector modeling of defects and defect repair for phase-shifting masks
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Abstract
Phase shifting masks (PSMs) have shown great promise for extending resolution in optical lithography. However, the production of defect free PSMs is a challenging task. Because of their increased sensitivity to process faults and defects, production difficulty is a major hurdle to overcome before PSMs become commonplace in semiconductor manufacturing. Rigorous simulation of PSM defects and production faults is a useful tool for understanding the sensitivities and limitations of this new technology. The complex topographies and non- planarities of PSMs require vector modeling to properly consider light scattering effects. Scalar models such as SPLAT cannot investigate scattering due to high edges, thick layers, and changes in refractive index. We are investigating PSMs using the rigorous 2-D photolithography simulator METROPOLE. In particular, we are studying the advantages and limitations of two new techniques for PSM defect repair. The first technique uses a double shifting structure, the second uses an electron beam sensitive silicon-containing resist.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin D. Lucas and Andrzej J. Strojwas "Vector modeling of defects and defect repair for phase-shifting masks", Proc. SPIE 1809, 12th Annual BACUS Symposium on Photomask Technology and Management, (26 March 1993); https://doi.org/10.1117/12.142136
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