4 May 1993 Deposition of amorphous silicon films by laser ablation
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Proceedings Volume 1810, 9th International Symposium on Gas Flow and Chemical Lasers; (1993) https://doi.org/10.1117/12.144588
Event: Ninth International Symposium on Gas Flow and Chemical Lasers, 1992, Heraklion, Greece
Abstract
The process of amorphous silicon film deposition in vacuo, by excimer and Nd YAG laser ablation of solid Si targets, is studied with the help of a plasma probe and time-of-flight measurements as well as the study of the morphology and the properties of the deposited films. Reactive deposition is obtained with the help of an atomic hydrogen beam source. A laser power density of about 1 GW/cm2, is necessary in order to obtain a deposition rate on the order of .3 micrometers /hour, at a distance of several cm. Time-of-flight spectroscopy analysis of ions in the film forming beam indicates that, at this power density, the predominant energies per atom/ion are above 100 eV, too high for film growth. A second problem for film deposition is the emission from the target of droplets that solidify on the film surface. We have succeeded in reducing the average beam energy and the emission of droplets with the help of electrodes that modify the net charge of the plasma plume. Films grown under these conditions have a smoother surface and do not retain hydrogen. This work is presently extended to laser assisted evaporation from molten Si and Ge targets.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Franghiadakis, Y. Franghiadakis, J. VanZytveld, J. VanZytveld, G. Zergioti, G. Zergioti, Elias I. Hontzopoulos, Elias I. Hontzopoulos, P. Tzanetakis, P. Tzanetakis, } "Deposition of amorphous silicon films by laser ablation", Proc. SPIE 1810, 9th International Symposium on Gas Flow and Chemical Lasers, (4 May 1993); doi: 10.1117/12.144588; https://doi.org/10.1117/12.144588
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