4 May 1993 Heat transfer in laser processing of thin films
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Proceedings Volume 1810, 9th International Symposium on Gas Flow and Chemical Lasers; (1993) https://doi.org/10.1117/12.144586
Event: Ninth International Symposium on Gas Flow and Chemical Lasers, 1992, Heraklion, Greece
Abstract
Melting and solidification of a silicon film by continuous wave laser beam irradiation has been studied. The silicon film melting and recrystallization is controlled by the temperature distribution in the semiconductor. Calculations have been carried out for a range of laser beam parameters and material translational speeds. The temperature field development also has been monitored with localized transient reflectivity measurements. During transient heating of semitransparent materials at the nanosecond scale, the thermal gradients across the heat affected zone are accompanied by changes in the material complex refractive index. These changes, coupled with wave interference, modify the energy absorption and thus the temperature field in the target material. These affects are taken into account in a rigorous manner using thin film optics theory.
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Constantine P. Grigoropoulos, Constantine P. Grigoropoulos, Xianfan Xu, Xianfan Xu, Hee K. Park, Hee K. Park, Scott L. Taylor, Scott L. Taylor, } "Heat transfer in laser processing of thin films", Proc. SPIE 1810, 9th International Symposium on Gas Flow and Chemical Lasers, (4 May 1993); doi: 10.1117/12.144586; https://doi.org/10.1117/12.144586
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