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Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection
Central wavelength of the electrical injection luminescence spectra of double-heterostructure AlGaAs light-emitting diodes
Analysis of the effects of traversing torch and deposited layer thickness on particle deposition in the modified chemical vapor deposition process
InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy