23 October 1992 Critical comparison of DH, SCH, and GRIN-SCH-SQW 780-nm ridge-waveguide lasers
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131250
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
The operating characteristics of ridge-waveguide AlGaAs/GaAs lasers with conventional double heterostructure (DH), separate-confinement heterostructures (SCH), and graded-index separate-confinement heterostructure single quantum well (GRIN-SCH-SQW) active layer structures grown by metalorganic vapor phase epitaxy (MOVPE) technique are reported. For conventional DH and SCH structures, an undoped Al0.15Ga0.85As active layer was used for an emission wavelength of 780 nm. An undoped 30 angstroms GaAs quantum well was centered in the 3000 angstroms thick graded AlxGa1-xAs (x equals 0.2 - 0.55) GRIN-SCH region with linear Al profile. The lasers with GRIN-SCH-SQE active layer exhibited lowest threshold current density among these three structures. The conventional DH laser has been shown to have better beam qualities and lower astigmatism than the other two types of lasers. Reliable operation for more than 1500 hrs was achieved at 50 degree(s)C for conventional DH lasers. However, GRIN-SCH-SQW lasers with very thin active layer (<EQ 30 angstroms) showed much higher degradation rate.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rong-Yih Hwang, Rong-Yih Hwang, Shau-Wen Luh, Shau-Wen Luh, J. K. Hsu, J. K. Hsu, M. D. Liu, M. D. Liu, Chuan-Ming Chang, Chuan-Ming Chang, Tzer-Perng Chen, Tzer-Perng Chen, Biing-Jye Lee, Biing-Jye Lee, } "Critical comparison of DH, SCH, and GRIN-SCH-SQW 780-nm ridge-waveguide lasers", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131250; https://doi.org/10.1117/12.131250
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