Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection

Yen C. Tzeng; Sheng S. Li

doi:10.1117/12.131229

23 October 1992 Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection

Yen C. Tzeng, Sheng S. Li

Author Affiliations +

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131229
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

A new stable fundamental mode operation of a ridge wave guide laser array has been fabricated by introducing absorption regions in the laser stripes except the central one. The structure may be considered as an integrated injection locking array or the distributed saturable absorption laser array. The threshold current is typically 40 mA and the maximum power is more than 150 mW for laser arrays with five elements. The single lobed far field pattern is centered at 0 degree(s) with a full width at half maximum of 2 degree(s) at I equals 1.5 Ith.

Citation Download Citation

Yen C. Tzeng and Sheng S. Li "Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131229

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available