23 October 1992 Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131229
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
A new stable fundamental mode operation of a ridge wave guide laser array has been fabricated by introducing absorption regions in the laser stripes except the central one. The structure may be considered as an integrated injection locking array or the distributed saturable absorption laser array. The threshold current is typically 40 mA and the maximum power is more than 150 mW for laser arrays with five elements. The single lobed far field pattern is centered at 0 degree(s) with a full width at half maximum of 2 degree(s) at I equals 1.5 Ith.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yen C. Tzeng, Yen C. Tzeng, Sheng S. Li, Sheng S. Li, } "Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131229; https://doi.org/10.1117/12.131229
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