Paper
23 October 1992 Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays
Jian-Shihn Tsang, D. C. Liou, C. M. Tsai, C. P. Lee, Feng-Yuh Juang
Author Affiliations +
Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131230
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
Single narrow stripe ridge-waveguide modified triple-quantum-well AlGaAs lasers were fabricated with high reflection and anti-reflection facet coatings. The maximum cw output power exceeded 100 mW and kink-free power was up to 80 mW. The device had a characteristic temperature of 320 degree(s)K and a threshold current density of 480 A/cm2. A lateral spreading current as large as 20 mA was found. The aspect ratio of the far-field beam pattern was four while the astigmatism was measured to be less than 5 micrometers . The dependence of the parallel beam divergent angle on the ridge width was also investigated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian-Shihn Tsang, D. C. Liou, C. M. Tsai, C. P. Lee, and Feng-Yuh Juang "Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131230
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
High power lasers

Silicon

Laser vision correction

Mirrors

Saturable absorption

Waveguides

Optoelectronic devices

RELATED CONTENT

Coherent diode laser arrays
Proceedings of SPIE (May 13 1998)
Laser Machining Of Ceramic And Silicon
Proceedings of SPIE (September 22 1987)
Silicon-on-insulator integrated optic transceivers
Proceedings of SPIE (April 25 1997)
Grating based hybrid silicon lasers
Proceedings of SPIE (February 03 2009)

Back to Top