23 October 1992 Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131230
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Single narrow stripe ridge-waveguide modified triple-quantum-well AlGaAs lasers were fabricated with high reflection and anti-reflection facet coatings. The maximum cw output power exceeded 100 mW and kink-free power was up to 80 mW. The device had a characteristic temperature of 320 degree(s)K and a threshold current density of 480 A/cm2. A lateral spreading current as large as 20 mA was found. The aspect ratio of the far-field beam pattern was four while the astigmatism was measured to be less than 5 micrometers . The dependence of the parallel beam divergent angle on the ridge width was also investigated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian-Shihn Tsang, Jian-Shihn Tsang, D. C. Liou, D. C. Liou, C. M. Tsai, C. M. Tsai, C. P. Lee, C. P. Lee, Feng-Yuh Juang, Feng-Yuh Juang, } "Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131230; https://doi.org/10.1117/12.131230

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