23 October 1992 InGaSb/GaSb strained quantum wells by MOCVD
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131246
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
Bulks layers of both GaSb and InGaSb have been successfully deposited by metal-organic chemical vapor deposition (MOCVD). The transition energies in the GaSb/InxGa1-xSb single quantum well have been calculated using a model which takes into account the elastic strain and quantum well effects. The shifts of transitions energies as a function of In solid compositions and well widths for 300 K and 12 K, respectively, were calculated. The transition energies from conduction bands to light holes at 12 K were found to be higher than the GaSb energy-gap with In composition below 0.3. Thus, the light hole band cannot be confined in the quantum wells with In composition between 0 and 0.3. The photoluminescence (PL) spectra of quantum well structures with different well widths were presented. The transition energies obtained from the PL spectra were compared with theoretical predictions.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Hwang Su, Ching Hwang Su, Yan-Kuin Su, Yan-Kuin Su, Fuh Shyang Juang, Fuh Shyang Juang, } "InGaSb/GaSb strained quantum wells by MOCVD", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131246; https://doi.org/10.1117/12.131246
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