Bulks layers of both GaSb and InGaSb have been successfully deposited by metal-organic chemical vapor deposition (MOCVD). The transition energies in the GaSb/InxGa1-xSb single quantum well have been calculated using a model which takes into account the elastic strain and quantum well effects. The shifts of transitions energies as a function of In solid compositions and well widths for 300 K and 12 K, respectively, were calculated. The transition energies from conduction bands to light holes at 12 K were found to be higher than the GaSb energy-gap with In composition below 0.3. Thus, the light hole band cannot be confined in the quantum wells with In composition between 0 and 0.3. The photoluminescence (PL) spectra of quantum well structures with different well widths were presented. The transition energies obtained from the PL spectra were compared with theoretical predictions.