InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy

Wei Lin; Yuan-Kuang Tu; Ting-Arn Dai; Wen-Jeng Ho; Chuan-Yang Chang; Gwo-Yue Lee

doi:10.1117/12.131254

23 October 1992 InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy

Wei Lin, Yuan-Kuang Tu, Ting-Arn Dai, Wen-Jeng Ho, Chuan-Yang Chang, Gwo-Yue Lee

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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131254
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

A systematic study in the growth of In_xGa_1-xAs_yP_1-y (0.53 < x < 1, 0 < y < 1) compound semiconductor and it's application to laser diode structure has been carried out by the low-pressure organometallic vapor phase epitaxy (LP- OMVPE) technique. The indium (In), gallium (Ga), arsenic (As) and phosphorus (P) incorporation efficiencies were studied by varying the flow-rate of source gases. At the optimized growth conditions, the In incorporation efficiency has been found about 0.7 as compared with Ga's in both In_.53Ga_.47As and InGaAsP epilayers, and the Ga composition can be adjusted simply by varying the trimethylgallium (TMG) flow-rate linearly. However, the P incorporation efficiency is found much lower than the A's. Furthermore, we found that the As composition in In_xGa_1-xAs_yP_1-y quaternary epilayer (Q layer) is determined by arsine (AsH₃) flow-rate not by the AsH₃/PH₃ flow-rate ratio in gas phase. The hydride flow-rates concerning in experimental growth of Q layer has been explained by the proposed As/P competition model and then formulated. According to this model, the AsH₃ flow-rate is found proportional to y^2.24259(1-y)^-0.27138. For the final purpose, the graded index- separate confinement heterostructure (GRIN-SCH) and quantum wells (QW) for laser diode structure have been grown and demonstrated.

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Wei Lin, Yuan-Kuang Tu, Ting-Arn Dai, Wen-Jeng Ho, Chuan-Yang Chang, and Gwo-Yue Lee "InxGa1-xAsyP1-y (0.53<x<1, 0<y<1) compound semiconductor for laser diode structures by organometallic vapor-phase epitaxy", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131254

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KEYWORDS

Quantum wells

Gallium

Arsenic

Heterojunctions

Semiconductor lasers

Compound semiconductors

Indium

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