23 October 1992 Studies on surface passivation of GaAs by P2S5/(NH4)2S and (NH4)2Sx sulfurization techniques
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Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131257
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
A new surface passivation technique using P2S5/(NH4)2S on GaAs Schottky barrier diodes formed by Au and Al contacts was investigated, and the results are compared with those of (NH4)2Sx-treated devices. With this new surface treatment, the effective barrier heights for both Al- and Au-GaAs Schottky diodes were found to vary with the work function of metals, which is clear evidence of the lower surface state density in these diodes. Results of I-V measurements shows that P2S5/(NH4)2S-passivated diodes have lower reverse leakage current and higher effective barrier height than that of the (NH4)2Sx-treated diodes. We also utilized RTA annealing and successive sulfurization to identify the characteristics of the sulfide film. Results show that the anneal at 250 degree(s)C to certain extent destroys the Ga-S (and/or As-S) bonding. Auger Electron Spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Raman scattering measurements are done to characterize the surface compositions and surface band bending.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerwei Hsieh, Jerwei Hsieh, Huey Liang Hwang, Huey Liang Hwang, } "Studies on surface passivation of GaAs by P2S5/(NH4)2S and (NH4)2Sx sulfurization techniques", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131257; https://doi.org/10.1117/12.131257

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