26 October 1992 Characteristics of anodic sulfide films for passivation of HgCdTe photodiodes
Author Affiliations +
Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131269
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Anodic sulfides were grown on HgCdTe using different electrolyte concentrations and current densities. These sulfide films were characterized by film thickness, refractive index, and composition depth profile. The results demonstrate a strong dependence of film properties on the extent of electrolyte polarization. By enhancing the polarization effect during anodization high quality sulfide/HgCdTe interfaces, and thus satisfactory electrical characteristics, are obtained.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Der-Tsyr Fan, Der-Tsyr Fan, Liang Po Chen, Liang Po Chen, ChengDer Chiang, ChengDer Chiang, Ya-Tung Cherng, Ya-Tung Cherng, Yen-Ming Pang, Yen-Ming Pang, Sheng-Jehn Yang, Sheng-Jehn Yang, "Characteristics of anodic sulfide films for passivation of HgCdTe photodiodes", Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131269; https://doi.org/10.1117/12.131269

Back to Top