Etching process investigation of anodic oxide on Hg0.8Cd0.2Te

Gwo-Jen Jan; Shi-Chen Chao; Kuo-Tung Hsu

doi:10.1117/12.131272

26 October 1992 Etching process investigation of anodic oxide on Hg0.8Cd0.2Te

Gwo-Jen Jan, Shi-Chen Chao, Kuo-Tung Hsu

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131272
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

The electrolyte electroreflectance and reflectivity measurements were used to study the etching process and analyze the etching mechanism of etched anodic oxide film on HgCdTe. The observed shift of the energy peak in reflectance spectrum can be explained by the surface roughness. It was found that the oxide etched by HCl or HNO3 does not recover the original reflectivity spectra due to the surface characteristics, but lactic acid does. The multiple reflection theory was used to calculate the thickness and the etching rate of the oxide film. The etching characteristics of lactic acid have also been studied for different concentrations.

Citation Download Citation

Gwo-Jen Jan, Shi-Chen Chao, and Kuo-Tung Hsu "Etching process investigation of anodic oxide on Hg0.8Cd0.2Te", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131272

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