26 October 1992 High-performance PtSi Schottky barrier sensor array with imaging capability
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Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131275
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR detector is 0.21 to 0.22 eV with 4nA/cm2 dark current density at 77 degree(s)K. Its quantum efficiency is 0.3% at 4 micrometers . The charge handling capacity of the CCD is larger than 2.0E6 electrons/pixel. The charge transfer efficiency of the CCD at 77 degree(s)K is 0.9998 to 0.9999. The imaging capability of this chip to a thermal scene has been demonstrated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tien-Ming Chuang, Tien-Ming Chuang, Chia Ho, Chia Ho, Gi-Ming Shiue, Gi-Ming Shiue, Gwo-Ji Horng, Gwo-Ji Horng, Yu-Wen Chen, Yu-Wen Chen, Feng-Yuh Juang, Feng-Yuh Juang, Chung-Chi Chang, Chung-Chi Chang, Ho-Ching Chien, Ho-Ching Chien, Han-Yu Chang, Han-Yu Chang, Chung-Ren Lao, Chung-Ren Lao, Mon-Shen Chen, Mon-Shen Chen, Chun-Hui Tsai, Chun-Hui Tsai, } "High-performance PtSi Schottky barrier sensor array with imaging capability", Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131275; https://doi.org/10.1117/12.131275
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