26 October 1992 Integrated amorphous silicon linear image sensor
Author Affiliations +
Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131276
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
An integrated a-Si:H linear image sensor with a TFT-type photoconductor was successfully demonstrated. Each sensor element of the linear image sensor consists of a TFT-type photoconductor, a storage capacitor, and two TFT switches. All the devices were fabricated simultaneously with the same metal-insulator-semiconductor structure used for the TFTs. The characteristics of the TFT-type photoconductor and the TFTs are measured. The operation principle of the image sensor array is described; and the dynamic testing of a sensor element is discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tzung-Szu Weng, Tzung-Szu Weng, Biing-Seng Wu, Biing-Seng Wu, Tung-Liang Lin, Tung-Liang Lin, Hsiung-Ku Tsai, Hsiung-Ku Tsai, Hsiung-Kuang Chen, Hsiung-Kuang Chen, Sheng-Kai Hwang, Sheng-Kai Hwang, Wen-Jian Lin, Wen-Jian Lin, Mei-Soong Chen, Mei-Soong Chen, Jin-Der Lee, Jin-Der Lee, In-Cha Hsieh, In-Cha Hsieh, Jia-Shyong Cheng, Jia-Shyong Cheng, } "Integrated amorphous silicon linear image sensor", Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131276; https://doi.org/10.1117/12.131276

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