Optoelectronics high-power control devices (Invited Paper)

Jun-Ichi Nishizawa; Kazushi Dezaki

doi:10.1117/12.131266

26 October 1992 Optoelectronics high-power control devices (Invited Paper)

Jun-Ichi Nishizawa, Kazushi Dezaki

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131266
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

Light trigger and light quench static induction thyristor (LTLQ-SIThy) is described on the optical triggering and quenching mechanism. The static induction gate structure provides the high turn-on gain. Static induction photo transistor (SIPT) is used for the quenching device. The SIPT gives the high gain of the LTLQ-SIThy at turn-off. This functionally integrated power device provides the high efficiency to switch the large energy. The new LTLQ-SIThy which utilizes the LQ-SIThy for the quenching device is reported. This LTLQ-SIThy improves the switching ability in the large current, the dependency of temperature, and the controllability by the trigger/quench light.

Citation Download Citation

Jun-Ichi Nishizawa and Kazushi Dezaki "Optoelectronics high-power control devices (Invited Paper)", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131266

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