26 October 1992 Preparation and testing of InSb CID FPA: isolation oxide prepared by radio-frequency chemical vapor deposition and photoactivated CVD
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Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131291
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
This paper describes processing methods and test results on single crystal indium antimonide (InSb) charge injection device (CID) focal plane arrays (FPAs) with SiO2 made by (1) radio frequency heated chemical vapor deposition (rf CVD); or (2) photoactivated CVD (PACVD). Processing details are more detailed than previously revealed. Related process testing is also discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph B. Underwood, Joseph B. Underwood, Chih-Hong Chen, Chih-Hong Chen, } "Preparation and testing of InSb CID FPA: isolation oxide prepared by radio-frequency chemical vapor deposition and photoactivated CVD", Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131291; https://doi.org/10.1117/12.131291
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