27 October 1992 Effects of annealing on ZnS:TbF3 electroluminescent devices prepared by rf sputtering
Author Affiliations +
Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131306
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
In this study, four kinds of samples have been prepared for investigating the effects of annealing. The active layer which has higher post-annealing temperature may have better crystallinity, but the effects of higher post-annealing temperature may do damage to the interface states. The degradation of ACTFEL devices may be caused by the lower conduction current passed the active layer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiin Wen Li, Jiin Wen Li, Yan-Kuin Su, Yan-Kuin Su, Meiso Yokoyama, Meiso Yokoyama, } "Effects of annealing on ZnS:TbF3 electroluminescent devices prepared by rf sputtering", Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131306; https://doi.org/10.1117/12.131306
PROCEEDINGS
4 PAGES


SHARE
Back to Top