27 October 1992 Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering
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Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131327
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan
Abstract
In order to evaluate the interface properties of TFEL with stacked layer insulator structure, four kinds of samples with different insulating layers have been studied. It was found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chin-Tsar Hsu, Chin-Tsar Hsu, Yan-Kuin Su, Yan-Kuin Su, Meiso Yokoyama, Meiso Yokoyama, } "Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering", Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131327; https://doi.org/10.1117/12.131327
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